MH2205WZ is a 1200V, 50A fast recovery diode bare die designed for free-wheeling applications in industrial use. It features a light punch-through structure, low forward voltage (typical 1.65V at 50A and 25°C), and very fast, soft recovery characteristics. The die measures 4.20mm × 6.00mm and is fabricated on a 150mm wafer with a wafer thickness of 0.12mm. The device supports an operating junction temperature range of -40°C to +175°C and has a repetitive peak reverse voltage of 1200V. Reverse current is limited to 10μA at 1200V. The technology is qualified in TO-247N package, though the die itself is intended for module integration. Forward voltage and recovery performance are dependent on module design and mounting technology, and thus are not specified for bare die operation beyond the given baseline values.
Application: Free Wheeling
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| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MH2205WZ |
| Product Name | 1200V 50A, FRD Bare Die for IGBT Module |
| TJ | -40 to 175 C (-40 to 347 F) |
