MG7213WZ is a 1200V, 75A insulated gate bipolar transistor bare die designed for general industrial inverter applications. It features a trench light punch-through structure, a collector-emitter saturation voltage of 1.7V at 25°C, and a short-circuit withstand time of 10μs at 25°C and 8μs at 150°C. The chip measures 9.20mm × 9.20mm and is fabricated on a 150mm wafer with a thickness of 0.14±0.01mm. The device is qualified in TO-247N package technology. Junction temperature operates from -40°C to +175°C, with a maximum gate-emitter voltage of ±30V.
Application: General Inverter for Industrial Use
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| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MG7213WZ |
| Product Name | 10μs Short-Circuit Tolerance, 1200V 75A, IGBT Bare Die |
| Transistor Grade / Operating Range | Commercial |
