The MG7212WZ is a 1200V, 50A insulated gate bipolar transistor bare die designed for general industrial inverter applications. It features a trench light punch-through structure, a collector-emitter saturation voltage of 1.7V at 25°C, and a short-circuit withstand time of 10μs at V_CE ≤ 600V and V_GE = 15V. The die measures 8.60mm × 7.00mm and is mounted on a 150mm wafer. The device operates with a junction temperature range of -40°C to +175°C and meets RoHS standards. Thermal and switching characteristics depend on module design and mounting, and are not specified for bare die use.
Application: General Inverter for Industrial Use
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| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MG7212WZ |
| Product Name | 10μs Short-Circuit Tolerance, 1200V 50A, IGBT Bare Die |
| Transistor Grade / Operating Range | Commercial |
