The MG7110WZ is a 650V, 75A insulated gate bipolar transistor bare die designed for general inverters in automotive and industrial applications, and automotive heaters. It features a trench light punch-through structure with a collector-emitter saturation voltage of 1.70 V (typical) at 25°C and a short-circuit withstand time of 8 µs at junction temperatures up to 25°C. The die measures 5.70 mm × 5.70 mm and is fabricated on a 150 mm wafer with a wafer thickness of 0.08 ± 0.01 mm. The operating junction temperature ranges from -40°C to +175°C.
Application: General Inverter for Automotive and Industrial Use, Heater for Automotive
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| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MG7110WZ |
| Product Name | 8μs Short-Circuit Tolerance, 650V 75A, IGBT Bare Die |
| TJ | -40 to 175 C (-40 to 347 F) |
