The MG7109WZ is an IGBT bare die from ROHM Semiconductor GmbH, designed for applications such as general inverters in automotive and industrial settings, as well as automotive heaters. It features a collector-emitter voltage rating of 650V and a nominal collector current of 25A. The device has a low collector-emitter saturation voltage of 1.65V and is capable of withstanding short circuits for up to 8 microseconds. The IGBT is constructed using a trench light punch-through type technology, which contributes to its performance characteristics. The maximum operating junction temperature is rated from -40°C to +175°C, making it suitable for a wide range of thermal environments. The die size is 3.80mm x 3.80mm, and it can yield up to 978 chips per wafer. This product is intended for engineers looking for reliable performance in high-voltage applications.
Application: General Inverter for Automotive and Industrial Use, Heater for Automotive
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| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MG7109WZ |
| Product Name | 8μs Short-Circuit Tolerance, 650V 25A, IGBT Bare Die |
| TJ | -40 to 175 C (-40 to 347 F) |
