MG7107WZ is a 650V, 15A insulated gate bipolar transistor bare die designed for general inverters in automotive and industrial applications, as well as automotive heaters. It features a trench light punch-through structure, a collector-emitter saturation voltage of 1.65V at 25°C, and short-circuit withstand time of 8μs at 25°C and 6μs at 150°C. The die measures 3.20mm × 3.20mm and is fabricated on a 150mm wafer. The device operates with a junction temperature range from -40°C to +175°C.
Application: General Inverter for Automotive and Industrial Use, Heater for Automotive
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MG7107WZ |
| Product Name | 8μs Short-Circuit Tolerance, 650V 15A, IGBT Bare Die |
| TJ | -40 to 175 C (-40 to 347 F) |
