ROHM Semiconductor USA, LLC KXRB5 Series KXRB5-2050

These high-performance silicon micromachined linear accelerometers and inclinometers consist of a sensor element and an ASIC packaged in a 3x5x0.9 mm Land Grid Array (LGA). The sensor element is fabricated from single-crystal silicon with proprietary Deep Reactive Ion Etching (DRIE) processes, and is protected from the environment by a hermetically-sealed silicon cap at the wafer level. The KXRB5 series is designed to provide a high signal-to-noise ratio with excellent performance over temperature. These sensors can accept supply voltages between 2.5V and 5.25V. Sensitivity is factory programmable allowing customization for applications requiring from 1.5g to 6.0g ranges. Sensor bandwidth is user-definable. The auxillary input to the A/D converter and multiplexer minimizes the need for external A/D converters. The sensor element functions on the principle of differential capacitance. Acceleration causes displacement of a silicon structure resulting in a change in capacitance. An ASIC, using a standard CMOS manufacturing process, detects and transforms changes in capacitance into an analog output voltage, which is proportional to acceleration.