The IMZ1A is a dual transistor device combining an NPN and a PNP transistor in an SOT-457 package, designed for general purpose small signal amplification. The package measures 2.0 mm × 2.1 mm × 0.75 mm. Each transistor has a collector-emitter voltage rating of ±50 V and a collector current rating of ±150 mA. The total power dissipation is 300 mW, with a maximum of 200 mW per element. The junction temperature rating is 150°C, and the storage temperature range is -55°C to +150°C. The NPN transistor has a DC current gain (hFE) of 120 to 560 at 1 mA collector current, and the PNP transistor has the same gain range. The NPN transition frequency is 180 MHz, and the PNP is 140 MHz. The device supports automatic mounting and features independent transistor elements to eliminate interference.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | IMZ1A | IMZ1A |
| Product Name | NPN+PNP, SOT-457, General Purpose Amplification Transistor | PNP+NPN General Purpose Amplification Transistor |
| Polarity | NPN; PNP | NPN; PNP |
