ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays - IMT4T108 IMT4T108

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 114787-IMT4T108 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: SMT6 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 500mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 180 @ 2mA, 6V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 114787-IMT4T108 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: SMT6 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 500mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 180 @ 2mA, 6V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - IMT4T108 - 114787-IMT4T108 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - IMT4T108
114787-IMT4T108
TRANSISTORS - Transistors (BJT) - Arrays - IMT4T108 114787-IMT4T108
Manufacturer: Rohm Semiconductor Win Source Part Number: 114787-IMT4T108 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: SMT6 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 120V Max Vce (sat): 500mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 180 @ 2mA, 6V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 114787-IMT4T108
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 140MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: SMT6
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 500mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 2mA, 6V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now
Singapore, Singapore
120V 0.05A Bipolar Transistor
277-IMT4T108
120V 0.05A Bipolar Transistor 277-IMT4T108
TRANS 2PNP 120V 0.05A 6SMT Product overview: IMT4T108 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.05A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.05A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-IMT4T108 can be used for catalog matching and distributor lookup.

TRANS 2PNP 120V 0.05A 6SMT Product overview: IMT4T108 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.05A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.05A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-IMT4T108 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays - IMT4T108TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
IMT4T108TR-ND
Bipolar Transistor Arrays IMT4T108TR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Buy Now Datasheet
Bipolar Transistor Arrays - IMT4T108DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
IMT4T108DKR-ND
Bipolar Transistor Arrays IMT4T108DKR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Buy Now Datasheet
Bipolar Transistor Arrays - IMT4T108CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
IMT4T108CT-ND
Bipolar Transistor Arrays IMT4T108CT-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
IMT4T108
Bipolar Transistors - BJT IMT4T108
Bipolar Transistors - BJT DUAL PNP 120V 50MA SOT-457

Bipolar Transistors - BJT DUAL PNP 120V 50MA SOT-457

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - IMT4T108 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IMT4T108
Discrete Semiconductor Products - Transistors - Bipolar (BJT) IMT4T108
TRANS 2PNP 120V 0.05A 6SMT

TRANS 2PNP 120V 0.05A 6SMT

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 114787-IMT4T108 277-IMT4T108 IMT4T108TR-ND IMT4T108 IMT4T108
Product Name TRANSISTORS - Transistors (BJT) - Arrays - IMT4T108 120V 0.05A Bipolar Transistor Bipolar Transistor Arrays Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; 2 PNP (Dual) PNP PNP
Package Type SOT3; SMT6 Tape & Reel (TR) SC-74, SOT-457 SMT6
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
VCEO 120 volts 120 volts
Unlock Full Specs
to access all available technical data