ROHM Semiconductor USA, LLC Bipolar Transistor Arrays IMT4T108

Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6

TRANS 2PNP 120V 0.05A 6SMT Product overview: IMT4T108 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 0.05A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 0.05A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-IMT4T108 can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 114787-IMT4T108
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 140MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: SMT6
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 500mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 2mA, 6V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance