The IMT1A is a dual PNP transistor in an SMT6 (SOT-457) package, designed for general purpose small signal amplification. Each transistor has a collector-emitter voltage rating of -50 V, a collector current rating of -150 mA, and a total power dissipation of 300 mW with no more than 200 mW per element. The junction temperature ranges from -55 °C to +150 °C. The package dimensions are 2.9 mm × 2.8 mm. It meets the AEC-Q200 standard for automotive applications and is RoHS compliant. The DC current gain ranges from 120 to 560 at a collector current of 1 mA, and the transition frequency is 140 MHz.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | IMT1A | IMT1A |
| Product Name | PNP+PNP, SOT-457, General Purpose Amplification Transistor | PNP+PNP General Purpose Amplification Transistor |
| Polarity | PNP | PNP |
