ROHM Semiconductor USA, LLC Bipolar Transistor Arrays IMT18T110

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 500mA 260MHz 300mW Surface Mount SMT6
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 500mA 260MHz 300mW Surface Mount SMT6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - IMT18T110-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
IMT18T110-ND
Bipolar Transistor Arrays IMT18T110-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 500mA 260MHz 300mW Surface Mount SMT6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 500mA 260MHz 300mW Surface Mount SMT6

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - IMT18T110 - 1045415-IMT18T110 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - IMT18T110
1045415-IMT18T110
TRANSISTORS - Transistors (BJT) - Arrays - IMT18T110 1045415-IMT18T110
Manufacturer: Rohm Semiconductor Win Source Part Number: 1045415-IMT18T110 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 260MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SMT6 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 10mA, 2V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1045415-IMT18T110
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 260MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SMT6
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 270 @ 10mA, 2V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - IMT18T110 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IMT18T110
Discrete Semiconductor Products - Transistors - Bipolar (BJT) IMT18T110
TRANS 2PNP 12V 0.5A 6SMT

TRANS 2PNP 12V 0.5A 6SMT

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
IMT18T110
Bipolar Transistors - BJT IMT18T110
Bipolar Transistors - BJT TRANS GP BJT PNP 12V 0.5A 6PIN

Bipolar Transistors - BJT TRANS GP BJT PNP 12V 0.5A 6PIN

Buy Now Datasheet
TRANS 2PNP 12V 0.5A 6SMT - 687-IMT18T110 - Utmel Electronic Limited
Hong Kong, China
TRANS 2PNP 12V 0.5A 6SMT
687-IMT18T110
TRANS 2PNP 12V 0.5A 6SMT 687-IMT18T110
TRANS 2PNP 12V 0.5A 6SMT

TRANS 2PNP 12V 0.5A 6SMT

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number IMT18T110-ND 1045415-IMT18T110 IMT18T110 IMT18T110 687-IMT18T110
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - IMT18T110 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT TRANS 2PNP 12V 0.5A 6SMT
Polarity PNP PNP; 2 PNP (Dual) PNP; PNP
Package Type SC-74, SOT-457 SOT3; SMT6
Packing Method Tape Reel; Tape & Reel (TR)
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