IMT18 is a dual PNP transistor in an SOT-457 package, designed for low-frequency amplifier and driver applications. Each transistor has a collector-emitter voltage rating of -12 V, a collector current rating of -500 mA, and a total power dissipation of 300 mW, with no more than 200 mW per element. The DC current gain ranges from 270 to 680 at -2 V and -10 mA, and the collector-emitter saturation voltage is between -100 mV and -250 mV at -200 mA collector current and -10 mA base current. The transition frequency is 260 MHz. The device is rated for operation from -55 °C to 150 °C junction temperature and meets RoHS compliance.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | IMT18 |
| Product Name | PNP+PNP, SOT-457, Low VCE(sat) Transistor |
| Polarity | PNP |
