Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
TRANS PREBIAS DUAL NPN SMT6 Product overview: IMH11AT110 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-IMH11AT110 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 109631-IMH11AT110
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SMT6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
TRANS PREBIAS DUAL NPN SMT6
TRANS PREBIAS DUAL NPN SMT6
Bipolar Transistors - Pre-Biased DUAL NPN 50V 50MA SOT-457
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | IMH11AT110CT-ND | 293-IMH11AT110 | 109631-IMH11AT110 | IMH11AT110 | IMH11AT110 | IMH11AT110 |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Dual Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMH11AT110 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistors - Pre-Biased |
| Polarity | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual); NPN | ||
| Package Type | SC-74, SOT-457 | Tape & Reel (TR) | SOT3; SMT6 | SC-74, SOT-457 | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||
| VCEO | 50 volts | 50 volts | 50 volts |
