ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMD23T108 IMD23T108

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1045410-IMD23T108
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz, 250MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 1k, 10k
Resistor - Emitter Base (R2) (Ohms): 10k, 10k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: SMT6
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 50mA, 2.5mA, 300mV @ 10mA, 500μA
Typical Gain (hFE) (Min): 56 @ 50mA, 5V, 30 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

TRANS PREBIAS NPN/PNP 50V SC74 Product overview: IMD23T108 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-IMD23T108 can be used for catalog matching and distributor lookup.