The IMD16AT108 is a dual digital transistor array featuring one NPN and one PNP transistor in a surface mount package (SMT6). It is designed for power management applications, capable of driving up to 500mA with a low collector-emitter saturation voltage (VCE(sat)) of 300mV at specified currents. The device has a maximum collector-emitter breakdown voltage (VCEO) of 50V and a maximum power dissipation of 300mW. The typical DC current gain (hFE) is 100 at 1mA and 82 at 50mA, making it suitable for various switching applications. The transition frequency is rated at 250MHz, indicating its capability for high-speed operations. The product is halogen-free and compliant with environmental standards, ensuring its suitability for modern electronic designs.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 109583-IMD16AT108
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Family Name: IMD16A
Resistor - Base (R1) (Ohms): 100k, 2.2k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SMT6
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA / 300mV @ 100μA, 1mA
Typical Gain (hFE) (Min): 100 @ 1mA, 5V / 82 @ 50mA, 5V
Maximum Power Dissipation: 300mW
Alternative Parts (Cross-Reference): IMD16A;
Introduction Date: November 22, 1998
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
| Win Source Electronics | |
|---|---|
| Product Category | Logic Level Translators |
| Product Number | 109583-IMD16AT108 |
| Product Name | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMD16AT108 |
