The IMD10A is a dual digital transistor with integrated bias resistors in an SMT6 (SOT-457) package, designed for switching applications up to 500mA. Each transistor element has a maximum power dissipation of 200mW, with a total package rating of 300mW. The device supports a collector-emitter voltage of 50V and an input voltage range of -5V to +5V. The collector current per element is rated at 100mA. The equivalent circuit includes two digital transistors with input resistors, and the package dimensions are consistent with the EIAJ SC-74 standard. The junction temperature rating is 150°C, and the storage temperature ranges from -55°C to +150°C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | IMD10A | IMD10A |
| Product Name | NPN+PNP, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor) | PNP+NPN Digital transistor (with built-in resistors) |
| Polarity | NPN; PNP | NPN; PNP |
