ROHM Semiconductor USA, LLC 0.3W Bipolar Transistor IMB7

Description
TRANS 2PNP PREBIAS 0.3W SOT457 Product overview: IMB7 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-IMB7 can be used for catalog matching and distributor lookup.
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Description
TRANS 2PNP PREBIAS 0.3W SOT457 Product overview: IMB7 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-IMB7 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
0.3W Bipolar Transistor
293-IMB7
0.3W Bipolar Transistor 293-IMB7
TRANS 2PNP PREBIAS 0.3W SOT457 Product overview: IMB7 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-IMB7 can be used for catalog matching and distributor lookup.

TRANS 2PNP PREBIAS 0.3W SOT457 Product overview: IMB7 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-IMB7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMB7 - 282975-IMB7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMB7
282975-IMB7
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMB7 282975-IMB7
Manufacturer: Rohm Semiconductor Win Source Part Number: 282975-IMB7 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: SOT-457 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Automation & Process Control, Consumer Electronics, Test & Measurement, Automotive, Portable Devices

Manufacturer: Rohm Semiconductor
Win Source Part Number: 282975-IMB7
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: SOT-457
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Automation & Process Control, Consumer Electronics, Test & Measurement, Automotive, Portable Devices

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-IMB7 282975-IMB7
Product Name 0.3W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMB7
Polarity PNP PNP; 2 PNP - Pre-Biased (Dual)
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