The EMZ7 is a dual transistor device integrating an NPN and a PNP transistor in a SOT-563 package, designed for general-purpose small signal amplification. Each transistor has a collector-emitter voltage rating of 12 V and a continuous collector current of 500 mA. The collector-emitter saturation voltage is specified at 90 to 250 mV for the NPN and -100 to -250 mV for the PNP at 200 mA collector current. The devices feature independent transistor elements, reducing interference, and are compatible with EMT3 automatic mounting machines. The package dimensions match the SOT-563 standard, and the junction temperature range extends from -55°C to 150°C. Power dissipation is limited to 150 mW total, with no more than 120 mW per element.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | EMZ7 |
| Product Name | NPN+PNP, SOT-563, Low VCE(sat) Transistor |
| Polarity | NPN; PNP |
