The EMX26 is a dual NPN silicon transistor in an EMT6 package, intended for general-purpose applications requiring independent transistor elements to reduce interference. Each transistor has a collector-emitter voltage rating of 50 V, collector current of 0.15 A (DC), and total power dissipation of 150 mW, with no more than 120 mW per element. The devices feature a minimum DC current gain (hFE) of 820 at 5 V and 1 mA, and a transition frequency of 250 MHz. The package measures 3.1 mm by 1.6 mm with a lead pitch of 0.65 mm and is compatible with EMT3 automatic mounting machines. It is rated for a junction temperature up to 150 °C and packaged in tape for 8000 pieces per reel.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | EMX26 | EMX26 |
| Product Name | NPN+NPN, SOT-563, High hFE & Muting Transistor | NPN+NPN High hFE & Muting Transistor |
| Transistor Type | HFET | HFET |
