ROHM Semiconductor USA, LLC NPN+NPN General Purpose Amplification Transistor EMX2

Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Request a Quote Datasheet
Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
NPN+NPN General Purpose Amplification Transistor - EMX2 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN+NPN General Purpose Amplification Transistor
EMX2
NPN+NPN General Purpose Amplification Transistor EMX2
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - EMX2 - 258996-EMX2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - EMX2
258996-EMX2
TRANSISTORS - Transistors (BJT) - Arrays - EMX2 258996-EMX2
Manufacturer: Rohm Semiconductor Win Source Part Number: 258996-EMX2 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: EMT6 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 400mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 6V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 258996-EMX2
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 180MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: EMT6
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 400mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ROHM Semiconductor USA, LLC Win Source Electronics
Product Category Transistors Transistors
Product Number EMX2 258996-EMX2
Product Name NPN+NPN General Purpose Amplification Transistor TRANSISTORS - Transistors (BJT) - Arrays - EMX2
Polarity NPN NPN; 2 NPN (Dual)
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