Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6
Manufacturer: Rohm Semiconductor
Win Source Part Number: 015313-EMH2T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 68 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
TRANS 2NPN PREBIAS 0.15W EMT6
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
TRANS 2NPN PREBIAS 0.15W EMT6
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | EMH2T2RTR-ND | 015313-EMH2T2R | EMH2T2R | EMH2T2R | EMH2T2R |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH2T2R | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual); NPN | ||
| Package Type | SOT-563, SOT-666 | SOT3; EMT6 | SOT-563, SOT-666 | ||
| IC(max) | 100 milliamps | 100 milliamps | |||
| VCEO | 50 volts | 50 volts |
