ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH10T2R EMH10T2R

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 015310-EMH10T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 150mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH10T2R - 015310-EMH10T2R - Win Source Electronics
    Win Source Electronics
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  • Bipolar Transistor Arrays, Pre-Biased - EMH10T2R - ODG (Origin Data Global)
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  • TRANS 2NPN PREBIAS 0.15W EMT6 - 687-EMH10T2R - Utmel Electronic Limited
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    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 015310-EMH10T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 150mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH10T2R - 015310-EMH10T2R - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH10T2R
015310-EMH10T2R
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH10T2R 015310-EMH10T2R
Manufacturer: Rohm Semiconductor Win Source Part Number: 015310-EMH10T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 150mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 015310-EMH10T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 56 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH10T2RCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH10T2RCT-ND
Bipolar Transistor Arrays, Pre-Biased EMH10T2RCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH10T2RTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH10T2RTR-ND
Bipolar Transistor Arrays, Pre-Biased EMH10T2RTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH10T2RDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH10T2RDKR-ND
Bipolar Transistor Arrays, Pre-Biased EMH10T2RDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH10T2R - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
EMH10T2R
Bipolar Transistor Arrays, Pre-Biased EMH10T2R
TRANS 2NPN PREBIAS 0.15W EMT6

TRANS 2NPN PREBIAS 0.15W EMT6

Supplier's Site Datasheet
TRANS 2NPN PREBIAS 0.15W EMT6 - 687-EMH10T2R - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
TRANS 2NPN PREBIAS 0.15W EMT6
687-EMH10T2R
TRANS 2NPN PREBIAS 0.15W EMT6 687-EMH10T2R
TRANS 2NPN PREBIAS 0.15W EMT6

TRANS 2NPN PREBIAS 0.15W EMT6

Supplier's Site
Rf Transistor, 50V, 0.1A, Sot-563 Rohs Compliant Rohm - 68AH9845 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor, 50V, 0.1A, Sot-563 Rohs Compliant Rohm
68AH9845
Rf Transistor, 50V, 0.1A, Sot-563 Rohs Compliant Rohm 68AH9845
RF TRANSISTOR, 50V, 0.1A, SOT-563 ROHS COMPLIANT: YES

RF TRANSISTOR, 50V, 0.1A, SOT-563 ROHS COMPLIANT: YES

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
EMH10T2R
Bipolar Transistors - Pre-Biased EMH10T2R
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA

Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMH10T2R - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMH10T2R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMH10T2R
TRANS 2NPN PREBIAS 0.15W EMT6

TRANS 2NPN PREBIAS 0.15W EMT6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Utmel Electronic Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 015310-EMH10T2R EMH10T2RCT-ND EMH10T2R 687-EMH10T2R 68AH9845 EMH10T2R EMH10T2R
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH10T2R Bipolar Transistor Arrays, Pre-Biased Bipolar Transistor Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 Rf Transistor, 50V, 0.1A, Sot-563 Rohs Compliant Rohm Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; 2 NPN - Pre-Biased (Dual) NPN 2 NPN - Pre-Biased (Dual); NPN NPN; PNP; NPN, PNP
Package Type SOT3; EMT6 SOT-563, SOT-666 SOT-563, SOT-666 TO-3
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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