The EMH1 is a dual NPN digital transistor with built-in bias resistors in an SOT-563 package, designed for applications such as inverters, interfaces, and drivers. Each transistor has a maximum collector current of 100 mA and a supply voltage rating of 50 V. The package dimensions are 1.6 mm × 1.6 mm. Power dissipation is rated at 150 mW total, with no more than 120 mW per element. Input resistance is 22 kΩ with a resistance ratio of 0.8 to 1.2 between resistors. The device meets the RoHS standard and is designed for surface-mount assembly using standard automated equipment.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
TRANS 2NPN PREBIAS 0.15W EMT6 Product overview: EMH1 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMH1 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 258804-EMH1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Transistors |
| Product Number | EMH1 | EMH1 | 293-EMH1 | 258804-EMH1 |
| Product Name | NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) | NPN+NPN Digital transistor(with built-in resistors) | 0.15W Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH1 |
| Polarity | NPN | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) |
