The EMG8 is a dual digital transistor integrated circuit featuring two NPN transistors with built-in bias resistors in an SOT-553 package, designed for use in inverter, interface, and driver applications. Each transistor has a maximum collector current of 100 mA and a supply voltage rating of 50 V, with a total power dissipation of 150 mW. The device includes input resistors of 4.7 kΩ and 47 kΩ. The package measures 1.6 mm × 1.6 mm and is supplied in 8 mm wide tape on a 180 mm reel, with 8,000 units per reel. It meets RoHS compliance and operates within a junction temperature range of -55°C to +150°C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 258802-EMG8
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT5
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Embedded Design & Development, Medical
TRANS 2NPN PREBIAS 0.15W EMT5 Product overview: EMG8 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMG8 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | EMG8 | EMG8 | 258802-EMG8 | 293-EMG8 |
| Product Name | NPN+NPN, SOT-553, Dual Digital Transistor (Bias Resistor Built-in Transistor) | NPN+NPN Digital transistor(with built-in resistors) | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG8 | 0.15W Bipolar Transistor |
| Polarity | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | NPN |
