ROHM Semiconductor GmbH NPN+NPN, SOT-553, Dual Digital Transistor (Bias Resistor Built-in Transistor) EMG8

Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Request a Quote Datasheet
Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
NPN+NPN, SOT-553, Dual Digital Transistor (Bias Resistor Built-in Transistor) - EMG8 - ROHM Semiconductor GmbH
Willich, Germany
NPN+NPN, SOT-553, Dual Digital Transistor (Bias Resistor Built-in Transistor)
EMG8
NPN+NPN, SOT-553, Dual Digital Transistor (Bias Resistor Built-in Transistor) EMG8
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Supplier's Site Datasheet
NPN+NPN Digital transistor(with built-in resistors) - EMG8 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN+NPN Digital transistor(with built-in resistors)
EMG8
NPN+NPN Digital transistor(with built-in resistors) EMG8
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG8 - 258802-EMG8 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG8
258802-EMG8
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG8 258802-EMG8
Manufacturer: Rohm Semiconductor Win Source Part Number: 258802-EMG8 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT5 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Application Field: Used in Embedded Design & Development, Medical

Manufacturer: Rohm Semiconductor
Win Source Part Number: 258802-EMG8
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT5
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Embedded Design & Development, Medical

Buy Now Datasheet
Singapore
0.15W Bipolar Transistor
293-EMG8
0.15W Bipolar Transistor 293-EMG8
TRANS 2NPN PREBIAS 0.15W EMT5 Product overview: EMG8 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMG8 can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.15W EMT5 Product overview: EMG8 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMG8 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Transistors Transistors Transistors Bipolar RF Transistors
Product Number EMG8 EMG8 258802-EMG8 293-EMG8
Product Name NPN+NPN, SOT-553, Dual Digital Transistor (Bias Resistor Built-in Transistor) NPN+NPN Digital transistor(with built-in resistors) TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG8 0.15W Bipolar Transistor
Polarity NPN NPN NPN; 2 NPN - Pre-Biased (Dual) NPN
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