ROHM Semiconductor USA, LLC Bipolar Transistor Arrays, Pre-Biased EMG1T2R

Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - EMG1T2RTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMG1T2RTR-ND
Bipolar Transistor Arrays, Pre-Biased EMG1T2RTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMG1T2RCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMG1T2RCT-ND
Bipolar Transistor Arrays, Pre-Biased EMG1T2RCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMG1T2RDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMG1T2RDKR-ND
Bipolar Transistor Arrays, Pre-Biased EMG1T2RDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

Buy Now Datasheet
Singapore
0.15W Bipolar Transistor
293-EMG1T2R
0.15W Bipolar Transistor 293-EMG1T2R
TRANS 2NPN PREBIAS 0.15W EMT5 Product overview: EMG1T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMG1T2R can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.15W EMT5 Product overview: EMG1T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMG1T2R can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG1T2R - 015307-EMG1T2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG1T2R
015307-EMG1T2R
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG1T2R 015307-EMG1T2R
Manufacturer: Rohm Semiconductor Win Source Part Number: 015307-EMG1T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT5 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 015307-EMG1T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT5
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 56 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
EMG1T2R
Bipolar Transistors - Pre-Biased EMG1T2R
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA

Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA

Buy Now Datasheet
Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Rohm - 78AC6148 - Newark, An Avnet Company
Chicago, IL, United States
Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Rohm
78AC6148
Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Rohm 78AC6148
DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / RoHS Compliant: Yes

DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMG1T2R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMG1T2R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMG1T2R
TRANS 2NPN PREBIAS 0.15W EMT5

TRANS 2NPN PREBIAS 0.15W EMT5

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number EMG1T2RTR-ND 293-EMG1T2R 015307-EMG1T2R EMG1T2R 78AC6148 EMG1T2R
Product Name Bipolar Transistor Arrays, Pre-Biased 0.15W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG1T2R Bipolar Transistors - Pre-Biased Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Rohm Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; 2 NPN - Pre-Biased (Dual)
Package Type 6-SMD (5 Leads), Flat Leads Tape & Reel (TR) SOT3; EMT5 TO-3
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
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