TRANS 2NPN PREBIAS 0.15W EMT5 Product overview: EMG1T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMG1T2R can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5
Manufacturer: Rohm Semiconductor
Win Source Part Number: 015307-EMG1T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT5
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 56 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
DIGITAL TRANSISTOR, 50V, 0.1A; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / RoHS Compliant: Yes
TRANS 2NPN PREBIAS 0.15W EMT5
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 293-EMG1T2R | EMG1T2RTR-ND | 015307-EMG1T2R | 78AC6148 | EMG1T2R | EMG1T2R |
| Product Name | 0.15W Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG1T2R | Digital Transistor, 50V, 0.1A; Digital Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - Pre-Biased |
| Polarity | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | |||
| Package Type | Tape & Reel (TR) | 6-SMD (5 Leads), Flat Leads | SOT3; EMT5 | TO-3 | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| IC(max) | 100 milliamps | 100 milliamps |
