ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMF17T2R EMF17T2R

Manufacturer: Rohm Semiconductor
Win Source Part Number: 203647-EMF17T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz, 140MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: EMT6
Maximum Current Collector: 100mA, 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 20 @ 20mA, 5V / 180 @ 1mA, 6V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

TRANS NPN PREBIAS/PNP 0.15W EMT6 Product overview: EMF17T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMF17T2R can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA, 150mA 250MHz, 140MHz 150mW Surface Mount EMT6