EMD29 is a dual digital transistor in a SOT-563 package, integrating one PNP and one NPN transistor with built-in bias resistors for use in inverter, interface, and driver applications. The PNP transistor has a maximum collector current of -500mA and a supply voltage of -12V, while the NPN transistor has a maximum collector current of 100mA and a supply voltage of 50V. Both transistors share an input resistance of 10kΩ and a resistance ratio of R2/R1 between 0.8 and 1.2 for the NPN and 8 and 12 for the PNP. The device supports automatic mounting and has a total power dissipation of 150mW, with no individual element exceeding 120mW. The junction temperature range is -55°C to +150°C. The package is compatible with SOT-563 (EMT6) standard and is supplied in a 1616 tape and reel with 8000 pieces per reel.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | EMD29 | EMD29 |
| Product Name | NPN+PNP, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) | PNP+NPN Digital transistor (with built-in resistors) |
| Polarity | NPN; PNP | NPN; PNP |
