ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMB6T2R EMB6T2R

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1036303-EMB6T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: EMT6 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 68 @ 5mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1036303-EMB6T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: EMT6 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 68 @ 5mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMB6T2R - 1036303-EMB6T2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMB6T2R
1036303-EMB6T2R
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMB6T2R 1036303-EMB6T2R
Manufacturer: Rohm Semiconductor Win Source Part Number: 1036303-EMB6T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: EMT6 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 68 @ 5mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1036303-EMB6T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: EMT6
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 68 @ 5mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMB6T2R-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMB6T2R-ND
Bipolar Transistor Arrays, Pre-Biased EMB6T2R-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 30mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 30mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
EMB6T2R
Bipolar Transistors - Pre-Biased EMB6T2R
Bipolar Transistors - Pre-Biased DUAL PNP 50V 50MA

Bipolar Transistors - Pre-Biased DUAL PNP 50V 50MA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMB6T2R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMB6T2R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMB6T2R
TRANS 2PNP PREBIAS 0.15W EMT6

TRANS 2PNP PREBIAS 0.15W EMT6

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Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1036303-EMB6T2R EMB6T2R-ND EMB6T2R EMB6T2R
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMB6T2R Bipolar Transistor Arrays, Pre-Biased Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; 2 PNP - Pre-Biased (Dual) PNP
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