ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD713ZMT2L DTD713ZMT2L

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1035610-DTD713ZMT2L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 260MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: VMT3
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 140 @ 100mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

TRANS PREBIAS NPN 30V 0.2A VMT3 Product overview: DTD713ZMT2L from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.2A. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 0.2A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DTD713ZMT2L can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 30V 200mA 260MHz 150mW Surface Mount VMT3