ROHM Semiconductor GmbH NPN, SOT-416, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) DTD543XE

Description
These are the standard products of "digital transistors" which ROHM invented and marketed first in the world.
Request a Quote Datasheet
Description
These are the standard products of "digital transistors" which ROHM invented and marketed first in the world.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
NPN, SOT-416, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) - DTD543XE - ROHM Semiconductor GmbH
Willich, Germany
NPN, SOT-416, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
DTD543XE
NPN, SOT-416, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) DTD543XE
These are the standard products of "digital transistors" which ROHM invented and marketed first in the world.

These are the standard products of "digital transistors" which ROHM invented and marketed first in the world.

Supplier's Site Datasheet
NPN Digital transistor (with built-in resistors) - DTD543XE - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN Digital transistor (with built-in resistors)
DTD543XE
NPN Digital transistor (with built-in resistors) DTD543XE
These are the standard products of "digital transistors" which ROHM invented and marketed first in the world.

These are the standard products of "digital transistors" which ROHM invented and marketed first in the world.

Supplier's Site Datasheet
Singapore
150MW Bipolar Transistor
293-DTD543XE
150MW Bipolar Transistor 293-DTD543XE
TRANS PREBIAS NPN 150MW EMT3 Product overview: DTD543XE from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DTD543XE can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 150MW EMT3 Product overview: DTD543XE from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DTD543XE can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD543XE - 203496-DTD543XE - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD543XE
203496-DTD543XE
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD543XE 203496-DTD543XE
Manufacturer: Rohm Semiconductor Win Source Part Number: 203496-DTD543XE Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 260MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 300mV @ 5mA, 100mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 140 @ 100mA, 2V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 203496-DTD543XE
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 260MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 300mV @ 5mA, 100mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 140 @ 100mA, 2V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Transistors Transistors Bipolar RF Transistors Transistors
Product Number DTD543XE DTD543XE 293-DTD543XE 203496-DTD543XE
Product Name NPN, SOT-416, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) NPN Digital transistor (with built-in resistors) 150MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD543XE
Polarity NPN NPN NPN NPN; NPN - Pre-Biased
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