ROHM Semiconductor USA, LLC Single, Pre-Biased Bipolar Transistors DTD122JKT146

Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SMT3
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SMT3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - DTD122JKT146-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
DTD122JKT146-ND
Single, Pre-Biased Bipolar Transistors DTD122JKT146-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SMT3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 200mW Surface Mount SMT3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD122JKT146 - 1035607-DTD122JKT146 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD122JKT146
1035607-DTD122JKT146
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD122JKT146 1035607-DTD122JKT146
Manufacturer: Rohm Semiconductor Win Source Part Number: 1035607-DTD122JKT146 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 220 Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Not For New Designs Case / Package: SMT3 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 47 @ 50mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1035607-DTD122JKT146
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 220
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Case / Package: SMT3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 47 @ 50mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DTD122JKT146 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DTD122JKT146
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DTD122JKT146
TRANS PREBIAS NPN 50V 0.5A SMT3

TRANS PREBIAS NPN 50V 0.5A SMT3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
DTD122JKT146
Bipolar Transistors - Pre-Biased DTD122JKT146
Bipolar Transistors - Pre-Biased NPN 50V 500MA

Bipolar Transistors - Pre-Biased NPN 50V 500MA

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DTD122JKT146-ND 1035607-DTD122JKT146 DTD122JKT146 DTD122JKT146
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD122JKT146 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - Pre-Biased
Polarity NPN NPN; NPN - Pre-Biased
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