ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD114ESTP DTD114ESTP

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1035605-DTD114ESTP Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SPT Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 50mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD114ESTP - 1035605-DTD114ESTP - Win Source Electronics
    Win Source Electronics
  • Single, Pre-Biased Bipolar Transistors - DTD114ESTP-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DTD114ESTP - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1035605-DTD114ESTP Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SPT Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 50mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD114ESTP - 1035605-DTD114ESTP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD114ESTP
1035605-DTD114ESTP
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD114ESTP 1035605-DTD114ESTP
Manufacturer: Rohm Semiconductor Win Source Part Number: 1035605-DTD114ESTP Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SPT Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 56 @ 50mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1035605-DTD114ESTP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SPT
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 56 @ 50mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - DTD114ESTP-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
DTD114ESTP-ND
Single, Pre-Biased Bipolar Transistors DTD114ESTP-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DTD114ESTP - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DTD114ESTP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DTD114ESTP
TRANS PREBIAS NPN 50V 0.5A SPT

TRANS PREBIAS NPN 50V 0.5A SPT

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 1035605-DTD114ESTP DTD114ESTP-ND DTD114ESTP
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTD114ESTP Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased NPN
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