ROHM Semiconductor USA, LLC 200MW Bipolar Transistor DTC363EU

Description
TRANS PREBIAS NPN 200MW UMT3 Product overview: DTC363EU from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DTC363EU can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS NPN 200MW UMT3 Product overview: DTC363EU from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DTC363EU can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore
200MW Bipolar Transistor
293-DTC363EU
200MW Bipolar Transistor 293-DTC363EU
TRANS PREBIAS NPN 200MW UMT3 Product overview: DTC363EU from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DTC363EU can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 200MW UMT3 Product overview: DTC363EU from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DTC363EU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC363EU - 051015-DTC363EU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC363EU
051015-DTC363EU
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC363EU 051015-DTC363EU
Manufacturer: Rohm Semiconductor Win Source Part Number: 051015-DTC363EU Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 6.8k Resistor - Emitter Base (R2) (Ohms): 6.8k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: UMT3 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 70 @ 50mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 051015-DTC363EU
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 6.8k
Resistor - Emitter Base (R2) (Ohms): 6.8k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: UMT3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 80mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 70 @ 50mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-DTC363EU 051015-DTC363EU
Product Name 200MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC363EU
Polarity NPN NPN; NPN - Pre-Biased
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