ROHM Semiconductor USA, LLC Single, Pre-Biased Bipolar Transistors DTC123JSATP

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole SPT

Manufacturer: Rohm Semiconductor
Win Source Part Number: 000828-DTC123JSATP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SPT
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

TRANS PREBIAS NPN 50V 0.1A SPT Product overview: DTC123JSATP from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DTC123JSATP can be used for catalog matching and distributor lookup.