Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3
TRANS PREBIAS NPN 0.1A UMT3
DIGITAL TRANS, 50V, 0.1A, SOT-323; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio,RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors |
| Product Number | DTC114YU3T106DKR-ND | DTC114YU3T106 | 51AH5881 |
| Product Name | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Digital Trans, 50V, 0.1A, Sot-323; Digital Transistor Polarity Rohm |
| Polarity | NPN |
