ROHM Semiconductor USA, LLC Single, Pre-Biased Bipolar Transistors DTC114TSATP

Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole SPT
  • Single, Pre-Biased Bipolar Transistors - DTC114TSATP-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC114TSATP - 1035580-DTC114TSATP - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DTC114TSATP - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole SPT
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - DTC114TSATP-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
DTC114TSATP-ND
Single, Pre-Biased Bipolar Transistors DTC114TSATP-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole SPT

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole SPT

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC114TSATP - 1035580-DTC114TSATP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC114TSATP
1035580-DTC114TSATP
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC114TSATP 1035580-DTC114TSATP
Manufacturer: Rohm Semiconductor Win Source Part Number: 1035580-DTC114TSATP Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SPT Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 1mA, 10mA Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1035580-DTC114TSATP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SPT
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 1mA, 10mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DTC114TSATP - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DTC114TSATP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DTC114TSATP
TRANS PREBIAS NPN 50V 0.1A SPT

TRANS PREBIAS NPN 50V 0.1A SPT

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number DTC114TSATP-ND 1035580-DTC114TSATP DTC114TSATP
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC114TSATP Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased
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