ROHM Semiconductor USA, LLC Single, Pre-Biased Bipolar Transistors DTA123JETL

TRANS PREBIAS PNP 150MW EMT3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount EMT3

TRANS PREBIAS PNP 50V 0.1A EMT3 Product overview: DTA123JETL from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DTA123JETL can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 014961-DTA123JETL
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient