ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTA115GUAT106 DTA115GUAT106

Manufacturer: Rohm Semiconductor
Win Source Part Number: 113965-DTA115GUAT106
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Emitter Base (R2) (Ohms): 100k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: UMT3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 82 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Alternative Parts (Cross-Reference): DDTA113TUA-7-F; DTA144GUA; DTA144GUAT106;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

TRANS PREBIAS PNP 50V 0.1A UMT3 Product overview: DTA115GUAT106 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DTA115GUAT106 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT)