The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.
ROHM recommends BS2103F for new design.
| ROHM Semiconductor USA, LLC | |
|---|---|
| Product Category | Gate Drivers |
| Product Number | BS2100F |
| Product Name | 600V High voltage High & Low-side, Gate Driver |
| Driver Type | 600V High voltage High & Low-side, Gate Driver |
| Number of Outputs | 1 |
| Supply Voltage | 10 to 18 volts |
| Operating Temperature | -40 to 125 C (-40 to 257 F) |
