ROHM Semiconductor USA, LLC Microwire BUS 2Kbit(128x16bit) EEPROM BR93L56FV-W

Description
ROHM recommends BR93G56FV-3B for new design.
Description
ROHM recommends BR93G56FV-3B for new design.
Datasheet
Datasheet Summary
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The BR93L56FV-W is a 2Kbit (128x16bit) serial EEPROM utilizing a Microwire BUS interface. It operates with a power supply voltage range of 1.8V to 5.5V and supports high-speed communication at clock rates up to 2MHz. The device features a maximum write time of 5ms and includes an address auto-increment function for read operations. It is designed with several write protection mechanisms to prevent accidental data corruption, including write prohibition at power-on and via command codes. The EEPROM has a data retention capability of up to 40 years and an endurance of 1,000,000 write cycles. Typical current consumption is low, with 1.2mA during write operations and 0.3mA during read operations at 5V. The device is available in multiple package types, including SOP8 and TSSOP-B8, making it suitable for various applications. Overall, the BR93L56FV-W is a reliable choice for projects requiring non-volatile memory with efficient power usage and robust data protection features.

Datasheet Summary
Powered by GS/AI

The BR93L56FV-W is a 2Kbit (128x16bit) serial EEPROM utilizing a Microwire BUS interface. It operates with a power supply voltage range of 1.8V to 5.5V and supports high-speed communication at clock rates up to 2MHz. The device features a maximum write time of 5ms and includes an address auto-increment function for read operations. It is designed with several write protection mechanisms to prevent accidental data corruption, including write prohibition at power-on and via command codes. The EEPROM has a data retention capability of up to 40 years and an endurance of 1,000,000 write cycles. Typical current consumption is low, with 1.2mA during write operations and 0.3mA during read operations at 5V. The device is available in multiple package types, including SOP8 and TSSOP-B8, making it suitable for various applications. Overall, the BR93L56FV-W is a reliable choice for projects requiring non-volatile memory with efficient power usage and robust data protection features.

Suppliers

Company
Product
Description
Supplier Links
Microwire BUS 2Kbit(128x16bit) EEPROM - BR93L56FV-W - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
Microwire BUS 2Kbit(128x16bit) EEPROM
BR93L56FV-W
Microwire BUS 2Kbit(128x16bit) EEPROM BR93L56FV-W
ROHM recommends BR93G56FV-3B for new design.

ROHM recommends BR93G56FV-3B for new design.

Supplier's Site Datasheet
2KBit, MicroWire BUS, Low Power Serial EEPROM - BR93L56FV-W - ROHM Semiconductor GmbH
Willich, Germany
2KBit, MicroWire BUS, Low Power Serial EEPROM
BR93L56FV-W
2KBit, MicroWire BUS, Low Power Serial EEPROM BR93L56FV-W
ROHM recommends BR93G56FVT-3A for new design.

ROHM recommends BR93G56FVT-3A for new design.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC ROHM Semiconductor GmbH
Product Category Memory Chips Memory Chips
Product Number BR93L56FV-W BR93L56FV-W
Product Name Microwire BUS 2Kbit(128x16bit) EEPROM 2KBit, MicroWire BUS, Low Power Serial EEPROM
Memory Category EEPROM EEPROM
Data Retention 40 years 40 years
Endurance 106 Write/Erase Cycles
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2 kbits 2 kbits
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