ROHM Semiconductor USA, LLC Memory IC and Storage Component BR24T128FVJ-WE2

Description
IC EEPROM 128KBIT I2C 8TSSOP Product overview: BR24T128FVJ-WE2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24T128FVJ-WE2 can be used for catalog matching and distributor lookup.
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Description
IC EEPROM 128KBIT I2C 8TSSOP Product overview: BR24T128FVJ-WE2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24T128FVJ-WE2 can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The BR24T128FVJ-WE2 is a serial EEPROM memory device from Quarktwin Technology Ltd. that utilizes an I¬=C bus interface. It has a storage capacity of 128Kbits, organized as 16K x 8 bits, and operates within a voltage range of 1.6V to 5.5V, making it suitable for battery-powered applications. The device supports a fast mode operation at 400 kHz and features a page write mode for efficient data writing. This EEPROM is designed for low power consumption, with a write current of up to 2.5 mA and a read current of 0.5 mA at maximum voltage. It boasts a high endurance of over 1 million write cycles and a data retention period exceeding 40 years. Additional features include a write protection function to prevent accidental data modification and built-in noise filtering on the SCL and SDA lines. The BR24T128FVJ-WE2 is available in a TSSOP-B8J package, which measures 3.00mm x 4.90mm x 1.10mm, making it compact for space-constrained designs. This product is suitable for applications requiring reliable non-volatile memory storage with a robust I¬=C interface.

Datasheet Summary
Powered by GS/AI

The BR24T128FVJ-WE2 is a serial EEPROM memory device from Quarktwin Technology Ltd. that utilizes an I¬=C bus interface. It has a storage capacity of 128Kbits, organized as 16K x 8 bits, and operates within a voltage range of 1.6V to 5.5V, making it suitable for battery-powered applications. The device supports a fast mode operation at 400 kHz and features a page write mode for efficient data writing. This EEPROM is designed for low power consumption, with a write current of up to 2.5 mA and a read current of 0.5 mA at maximum voltage. It boasts a high endurance of over 1 million write cycles and a data retention period exceeding 40 years. Additional features include a write protection function to prevent accidental data modification and built-in noise filtering on the SCL and SDA lines. The BR24T128FVJ-WE2 is available in a TSSOP-B8J package, which measures 3.00mm x 4.90mm x 1.10mm, making it compact for space-constrained designs. This product is suitable for applications requiring reliable non-volatile memory storage with a robust I¬=C interface.

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-BR24T128FVJ-WE2 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-BR24T128FVJ-WE2
Memory IC and Storage Component 774-BR24T128FVJ-WE2
IC EEPROM 128KBIT I2C 8TSSOP Product overview: BR24T128FVJ-WE2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24T128FVJ-WE2 can be used for catalog matching and distributor lookup.

IC EEPROM 128KBIT I2C 8TSSOP Product overview: BR24T128FVJ-WE2 from ROHM Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BR24T128FVJ-WE2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - BR24T128FVJ-WE2TR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 128Kb (16K x 8) I²C 400kHz 8-TSSOP-BJ

EEPROM Memory IC 128Kb (16K x 8) I²C 400kHz 8-TSSOP-BJ

Buy Now Datasheet
Memory - BR24T128FVJ-WE2DKR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 128Kb (16K x 8) I²C 400kHz 8-TSSOP-BJ

EEPROM Memory IC 128Kb (16K x 8) I²C 400kHz 8-TSSOP-BJ

Buy Now Datasheet
Memory - BR24T128FVJ-WE2CT-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 128Kb (16K x 8) I²C 400kHz 8-TSSOP-BJ

EEPROM Memory IC 128Kb (16K x 8) I²C 400kHz 8-TSSOP-BJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR24T128FVJ-WE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR24T128FVJ-WE2
Integrated Circuits (ICs) - Memory - Memory BR24T128FVJ-WE2
IC EEPROM 128KBIT I2C 8TSSOP

IC EEPROM 128KBIT I2C 8TSSOP

Supplier's Site
Memory - BR24T128FVJ-WE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 128Kbit I²C 400 kHz 8-TSSOP-BJ

EEPROM Memory IC 128Kbit I²C 400 kHz 8-TSSOP-BJ

Buy Now Datasheet
IC EEPROM 128KBIT I2C 8TSSOP

IC EEPROM 128KBIT I2C 8TSSOP

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-BR24T128FVJ-WE2 BR24T128FVJ-WE2TR-ND BR24T128FVJ-WE2 BR24T128FVJ-WE2 BR24T128FVJ-WE2
Product Name Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category EEPROM; Non-Volatile EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Cycle Time 5.00E6 ns 5.00E6 ns
Data Retention 40 years
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type TSSOP; Tape & Reel (TR) TSSOP; "8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)" SSOP; TSSOP SSOP; TSSOP; 8-TSSOP, 8-MSOP (0.118\", 3.00mm Width)
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