ROHM Semiconductor USA, LLC Memory BR24G04FVJ-3AGTE2

Description
IC EEPROM 4K I2C 1MHZ 8TSSOP
Description
IC EEPROM 4K I2C 1MHZ 8TSSOP
Datasheet
Datasheet Summary
Powered by GS/AI

The BR24G04FVJ-3AGTE2 is a 4Kbit serial EEPROM with an I²C bus interface, designed for low-power applications. It operates with a supply voltage range of 1.6V to 5.5V, making it suitable for battery-powered devices. The device supports a maximum clock frequency of 1MHz and allows for page write operations of up to 16 bytes. It features a self-timed programming cycle and includes a write protection function to prevent accidental writes, particularly at low voltage levels. This EEPROM is rated for more than 1 million write cycles and offers data retention of over 40 years. It incorporates a noise filter on the SCL and SDA terminals to enhance reliability. The package dimensions for the TSSOP-B8J variant are 3.00mm x 4.90mm x 1.10mm. The device is suitable for a variety of applications where non-volatile memory is required, particularly in environments where low power consumption is critical.

Datasheet Summary
Powered by GS/AI

The BR24G04FVJ-3AGTE2 is a 4Kbit serial EEPROM with an I²C bus interface, designed for low-power applications. It operates with a supply voltage range of 1.6V to 5.5V, making it suitable for battery-powered devices. The device supports a maximum clock frequency of 1MHz and allows for page write operations of up to 16 bytes. It features a self-timed programming cycle and includes a write protection function to prevent accidental writes, particularly at low voltage levels. This EEPROM is rated for more than 1 million write cycles and offers data retention of over 40 years. It incorporates a noise filter on the SCL and SDA terminals to enhance reliability. The package dimensions for the TSSOP-B8J variant are 3.00mm x 4.90mm x 1.10mm. The device is suitable for a variety of applications where non-volatile memory is required, particularly in environments where low power consumption is critical.

Suppliers

Company
Product
Description
Supplier Links
IC EEPROM 4K I2C 1MHZ 8TSSOP

IC EEPROM 4K I2C 1MHZ 8TSSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BR24G04FVJ-3AGTE2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BR24G04FVJ-3AGTE2
Integrated Circuits (ICs) - Memory - Memory BR24G04FVJ-3AGTE2
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP

IC EEPROM 4KBIT I2C 1MHZ 8TSSOP

Supplier's Site
Memory - BR24G04FVJ-3AGTE2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit I²C 1 MHz 8-TSSOP-BJ

EEPROM Memory IC 4Kbit I²C 1 MHz 8-TSSOP-BJ

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number BR24G04FVJ-3AGTE2 BR24G04FVJ-3AGTE2 BR24G04FVJ-3AGTE2
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71024S12Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Integrated Circuits (ICs) - Memory - Memory - MM54C200D/883 - Acme Chip Technology Co., Limited
Specs
Memory Category Volatile
Density 0 kbits
Package Type 16-CDIP
View Details
2 suppliers