ROHM Semiconductor USA, LLC Gate Drivers BD2320EFJ-LAE2

The BD2320EFJ-LAE2 is a high-voltage gate driver IC designed for driving external N-channel MOSFETs using a bootstrap method. It supports a maximum supply voltage of 100 V and can deliver peak output currents of 3.5 A for the high-side and 4.5 A for the low-side. The device features independent control inputs for both high-side and low-side operations, with interface voltage options of 3.3 V and 5.0 V. Built-in under-voltage lockout (UVLO) circuits enhance reliability by preventing operation under insufficient voltage conditions. This gate driver is suitable for various applications, including power supplies for telecom and datacom, as well as half-bridge and full-bridge converters. The propagation delay is typically 27 ns, with a maximum delay matching of 12 ns, ensuring efficient switching performance. The operating temperature range is from -40 ¬8C to +125 ¬8C, making it suitable for industrial environments. The package dimensions are 4.9 mm x 6.0 mm x 1.0 mm in an HTSOP-J8 format.