ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Single - BC858BWT106 BC858BWT106

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1022518-BC858BWT106 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: UMT3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 210 @ 2mA, 5V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1022518-BC858BWT106 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: UMT3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 210 @ 2mA, 5V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
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TRANSISTORS - Transistors (BJT) - Single - BC858BWT106 - 1022518-BC858BWT106 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC858BWT106
1022518-BC858BWT106
TRANSISTORS - Transistors (BJT) - Single - BC858BWT106 1022518-BC858BWT106
Manufacturer: Rohm Semiconductor Win Source Part Number: 1022518-BC858BWT106 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: UMT3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 210 @ 2mA, 5V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1022518-BC858BWT106
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UMT3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 650mV @ 5mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 210 @ 2mA, 5V
Maximum Power Dissipation: 350mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC858BWT106 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC858BWT106
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC858BWT106
TRANS PNP 30V 0.1A UMT3

TRANS PNP 30V 0.1A UMT3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC858BWT106
Bipolar Transistors - BJT BC858BWT106
Bipolar Transistors - BJT PNP 30V 1MA

Bipolar Transistors - BJT PNP 30V 1MA

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1022518-BC858BWT106 BC858BWT106 BC858BWT106
Product Name TRANSISTORS - Transistors (BJT) - Single - BC858BWT106 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP; PNP
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