ROHM Semiconductor USA, LLC Single Bipolar Transistors 2SD2170T100

Description
Bipolar (BJT) Transistor NPN - Darlington 90V 2A 80MHz 2W Surface Mount MPT3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 90V 2A 80MHz 2W Surface Mount MPT3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SD2170T100TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD2170T100TR-ND
Single Bipolar Transistors 2SD2170T100TR-ND
Bipolar (BJT) Transistor NPN - Darlington 90V 2A 80MHz 2W Surface Mount MPT3

Bipolar (BJT) Transistor NPN - Darlington 90V 2A 80MHz 2W Surface Mount MPT3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD2170T100 - 103173-2SD2170T100 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD2170T100
103173-2SD2170T100
TRANSISTORS - Transistors (BJT) - Single - 2SD2170T100 103173-2SD2170T100
Manufacturer: Rohm Semiconductor Win Source Part Number: 103173-2SD2170T100 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MPT3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 90V Max Vce (sat): 1.5V @ 1mA, 1A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 1000 @ 1A, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 103173-2SD2170T100
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: MPT3
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 90V
Max Vce (sat): 1.5V @ 1mA, 1A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 1000 @ 1A, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - 2SD2170T100 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2SD2170T100
Single Bipolar Transistors 2SD2170T100
TRANS NPN DARL 90V 2A MPT3

TRANS NPN DARL 90V 2A MPT3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD2170T100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD2170T100
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD2170T100
TRANS NPN DARL 90V 2A MPT3

TRANS NPN DARL 90V 2A MPT3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SD2170T100TR-ND 103173-2SD2170T100 2SD2170T100 2SD2170T100
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD2170T100 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Darlington NPN - Darlington; NPN
Package Type TO-243AA SOT3; SOT89; MPT3 TO-243AA
IC(max) 2000 milliamps 2000 milliamps
VCEO 90 volts 90 volts
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