ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Single - 2SD2167T100P 2SD2167T100P

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 197570-2SD2167T100P Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MPT3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 31V Max Vce (sat): 1V @ 200mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 82 @ 500mA, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 197570-2SD2167T100P Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MPT3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 31V Max Vce (sat): 1V @ 200mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 82 @ 500mA, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SD2167T100P - 197570-2SD2167T100P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD2167T100P
197570-2SD2167T100P
TRANSISTORS - Transistors (BJT) - Single - 2SD2167T100P 197570-2SD2167T100P
Manufacturer: Rohm Semiconductor Win Source Part Number: 197570-2SD2167T100P Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MPT3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 31V Max Vce (sat): 1V @ 200mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 82 @ 500mA, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 197570-2SD2167T100P
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: MPT3
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 31V
Max Vce (sat): 1V @ 200mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 82 @ 500mA, 3V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
31V 2A Bipolar Transistor
276-2SD2167T100P
31V 2A Bipolar Transistor 276-2SD2167T100P
TRANS NPN 31V 2A MPT3 Product overview: 2SD2167T100P from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 31V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 31V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2167T100P can be used for catalog matching and distributor lookup.

TRANS NPN 31V 2A MPT3 Product overview: 2SD2167T100P from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 31V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 31V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SD2167T100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD2167T100P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD2167T100P
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD2167T100P
TRANS NPN 31V 2A MPT3

TRANS NPN 31V 2A MPT3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 197570-2SD2167T100P 276-2SD2167T100P 2SD2167T100P
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SD2167T100P 31V 2A Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
Package Type SOT3; SOT89; MPT3 Tape & Reel (TR)
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
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