NPN silicon transistor for low-frequency amplification and driver applications, packaged in SOT-346 (SC-59) with a collector-emitter voltage rating of 50 V and a maximum collector current of 500 mA. The device has a power dissipation of 200 mW, a collector-emitter saturation voltage of 400 mV at 150 mA collector current and 15 mA base current, and a DC current gain (hFE) range of 120 to 390. It is AEC-Q101 qualified and RoHS compliant.
TRANSISTOR, AEC-Q101, NPN, 50V, 0.5A; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:250MHz; Power Dissipation Pd:200mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 81AC5868 |
| Product Name | Transistor, Aec-Q101, Npn, 50V, 0.5A; Transistor Polarity Rohm |
| Transistor Type | Transistor, Aec-Q101, Npn, 50V, 0.5A; Transistor Polarity Rohm |
