NPN silicon transistor for low-frequency amplification, rated for a collector-emitter voltage of 400 V and a collector current of 100 mA, housed in a TSMT6 package. The device has a maximum collector-emitter saturation voltage of 300 mV at a collector current of 20 mA and a base current of 2 mA, with a DC current gain (hFE) range of 82 to 270. Power dissipation is limited to 500 mW on a reference land. Storage and operating junction temperatures range from -55 °C to +150 °C. The part is RoHS compliant and supplied in a 3000-piece tape on a 180 mm reel with an 8 mm tape width. The TSMT6 package has a fine pin pitch requiring care against electrostatic discharge.
TRANSISTOR, NPN, 400V, 0.1A, TSMT; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:500mW; DC Collector Current:100mA; DC Current Gain hFE:120hFE; Transistor Case RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 82AC4040 |
| Product Name | Transistor, Npn, 400V, 0.1A, Tsmt; Transistor Polarity Rohm |
| Transistor Type | Transistor, Npn, 400V, 0.1A, Tsmt; Transistor Polarity Rohm |
