Rochester Electronics Memory X28C513JZ-12

Description
EEPROM, 64KX8, 5V, PARALLEL
  • Memory - X28C513JZ-12 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM, 64KX8, 5V, PARALLEL
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - X28C513JZ-12 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
X28C513JZ-12
Memory X28C513JZ-12
EEPROM, 64KX8, 5V, PARALLEL

EEPROM, 64KX8, 5V, PARALLEL

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number X28C513JZ-12
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C1005
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - EEPROM - NM29F030V - 1015635-NM29F030V - Win Source Electronics
Texas Instruments
Memory - EEPROM - NM29F030V
NM29F030V
View Details
2 suppliers
Memory - CAT24C16BWI-GT3JN - Lingto Electronic Limited
Rochester Electronics
Memory
CAT24C16BWI-GT3JN
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 16 kbits
View Details
Flash Memory - 1882874P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882874P
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details