Rochester Electronics Memory UPD46185182BF1-E40Y-EQ1

Description
QDR SRAM, 1MX18, 0.45NS
  • Memory - UPD46185182BF1-E40Y-EQ1 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
QDR SRAM, 1MX18, 0.45NS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - UPD46185182BF1-E40Y-EQ1 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
UPD46185182BF1-E40Y-EQ1
Memory UPD46185182BF1-E40Y-EQ1
QDR SRAM, 1MX18, 0.45NS

QDR SRAM, 1MX18, 0.45NS

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number UPD46185182BF1-E40Y-EQ1
Product Name Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 6116LA45SOGI - Lingto Electronic Limited
Rochester Electronics
Memory
6116LA45SOGI
Specs
Memory Category SRAM; SRAM Chip
Access Time 45 ns
Density 16 kbits
View Details
SDRAM - 2420768 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420768
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - SMJ27C512 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ27C512
Specs
Memory Category EPROM; UVEPROM
Access Time 15 to 25 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 00002161516 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
2161516
View Details